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Volumn 50, Issue 9-11, 2010, Pages 1203-1209

Power cycling results for different control strategies

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL STRATEGIES; POWER CYCLING; POWER SEMICONDUCTOR MODULE; SYSTEM DESIGN; TEMPERATURE SWINGS; TEST EQUIPMENTS; TEST PARAMETERS;

EID: 80052919019     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.07.135     Document Type: Conference Paper
Times cited : (94)

References (6)
  • 2
    • 84965008345 scopus 로고    scopus 로고
    • Model for power cycling lifetime of IGBT modules - Various factors influencing lifetime
    • R. Bayerer, T. Herrmann, T. Licht, J. Lutz, and M. Feller Model for power cycling lifetime of IGBT modules - various factors influencing lifetime Proc CIPS 2008 37 42
    • (2008) Proc CIPS , pp. 37-42
    • Bayerer, R.1    Herrmann, T.2    Licht, T.3    Lutz, J.4    Feller, M.5
  • 4
    • 65949119846 scopus 로고    scopus 로고
    • Power module design for HV-IGBTs with extended reliability
    • PC1.4
    • Scheuermann U. Power module design for HV-IGBTs with extended reliability. Proc PCIM Europe, PC1.4; 1999:49-54.
    • (1999) Proc PCIM Europe , pp. 49-54
    • Scheuermann, U.1
  • 5
    • 77956510486 scopus 로고    scopus 로고
    • Investigations on ageing of IGBT transistors under repetitive short-circuits operations
    • CD-ROM
    • Arab M, Lefebvre S, Khatir Z, Bontemps S. Investigations on ageing of IGBT transistors under repetitive short-circuits operations. Proc PCIM Europe, CD-ROM; 2008.
    • (2008) Proc PCIM Europe
    • Arab, M.1    Lefebvre, S.2    Khatir, Z.3    Bontemps, S.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.