Invited paper: Effect of channel/insulator interface formation process on the oxide TFT performance

Digest of Technical Papers - SID International Symposium

Volumn 40, Issue 1, 2009, Pages 276-279

  Park, Sang Hee Ko ^a   Hwang, Chi Sun ^a   Cho, Doo Hee ^a   Yoon, Sung Min ^a   Yang, Shinhyuk ^a   Byun, Chunwon ^a   Ryu, Minki ^a   Lee, Jeong Ik ^a   Kwon, Ohsang ^a   Cheong, Woo Seok ^a   Chu, Hye Yong ^a   Cho, Kyoung Ik ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ORGANIC LIGHT EMITTING DIODES (OLED);

BACK CHANNELS; BIAS TEMPERATURE; BOTTOM GATE; HIGHLY STABLES; INTERFACE FORMATION; MASS PRODUCTION; OXIDE TFT; TOP GATE;

FIELD EFFECT TRANSISTORS;

EID: 77952576891     PISSN: 0097966X     EISSN: 21680159     Source Type: Conference Proceeding    
DOI: 10.1889/1.3256762     Document Type: Conference Paper

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