Low temperature surface passivation of black silicon solar cells by high-pressure O2 thermal oxidation

ECS Solid State Letters

Volumn 2, Issue 4, 2013, Pages

  Liu, W F ^a,b   Bian, J M ^a,c   Zhao, Z C ^a   Luo, Y L ^a   Yuan, Z ^b   Zhang, B Y ^a   Liu, A M ^a,b  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b Jinzhou Yangguang Energy Co Ltd   (China)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BETTER PERFORMANCE; BLACK SILICON SOLAR CELLS; EXTERNAL QUANTUM EFFICIENCY; HIGH TEMPERATURE; LOW TEMPERATURES; SURFACE PASSIVATION; TEXTURED SURFACE; THERMAL OXIDATION;

LOW TEMPERATURE EFFECTS; NANOWIRES; SILICON SOLAR CELLS;

TEMPERATURE;

EID: 84880563325     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.003304ssl     Document Type: Article

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