The effects of Zn vacancies on ferromagnetism in Cu-doped ZnO films controlled by oxygen pressure and Li doping

Chinese Physics B

Volumn 22, Issue 6, 2013, Pages

  Ran, Cong Jun ^a   Yang, Hai Ling ^a   Wang, Yan Kai ^a   Hassan, Farooq M ^a   Zhou, Li Gong ^a   Xu, Xiao Guang ^a   Jiang, Yong ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

Cu doped ZnO; dilute magnetic semiconductor; first principles; pulsed laser deposition

Indexed keywords

CU-DOPED ZNO; DILUTE MAGNETIC SEMICONDUCTORS; FERROMAGNETIC PROPERTIES; FIRST-PRINCIPLES; FIRST-PRINCIPLES CALCULATION; PHOTOLUMINESCENCE ANALYSIS; ROOM-TEMPERATURE FERROMAGNETISM; WURTZITE STRUCTURE;

CALCULATIONS; FERROMAGNETISM; LITHIUM; METALLIC FILMS; OXYGEN; OXYGEN VACANCIES; PULSED LASER DEPOSITION; SATURATION MAGNETIZATION; SEMICONDUCTOR DOPING; ZINC; ZINC OXIDE; ZINC SULFIDE;

COPPER;

EID: 84880542492     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/22/6/067503     Document Type: Article

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