Origin of room-temperature ferromagnetism for cobalt-doped ZnO diluted magnetic semiconductor

Chinese Physics Letters

Volumn 25, Issue 4, 2008, Pages 1438-1441

  Peng, Long ^a   Zhang, Huai Wu ^a   Wen, Qi Ye ^a   Song, Yuan Qiang ^a   Su, Hua ^a   Xiao, John Q ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATMOSPHERIC TEMPERATURE; CARRIER CONCENTRATION; COBALT; COBALT COMPOUNDS; DILUTED MAGNETIC SEMICONDUCTORS; FERROMAGNETIC MATERIALS; II-VI SEMICONDUCTORS; OXYGEN VACANCIES; PHASE STRUCTURE; SATURATION MAGNETIZATION; SEMICONDUCTOR DOPING; SOLID STATE REACTIONS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

ANNEALED SAMPLES; ANNEALING ATMOSPHERES; COBALT-DOPED ZNO; EFFECT OF ANNEALING; FERROMAGNETIC BEHAVIOUR; HIGH OXYGEN VACANCIES; IN-VACUUM; SINGLE PHASIS; SINTERED SAMPLES; SOLID STATE REACTION METHOD;

FERROMAGNETISM;

EID: 43049132199     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/4/074     Document Type: Article

References (9)