Room temperature ferromagnetism and ferroelectricity behavior of (Cu, Li) co-doped ZnO films deposited by reactive magnetron sputtering

Journal of Crystal Growth

Volumn 312, Issue 7, 2010, Pages 906-909

  Zou, C W ^a,b   Wang, H J ^a   Yin, M L ^a   Li, M ^a   Liu, C S ^a   Guo, L P ^a   Fu, D J ^a   Kang, T W ^b  

^a WUHAN UNIVERSITY   (China)

^b Dongguk University   (South Korea)

Author keywords

A1 Magnetic fields; A3 Physical vapor deposition processes; B1 Oxides; B2 Semiconducting II VI materials

Indexed keywords

A3 PHYSICAL VAPOR DEPOSITION PROCESSES; ABSORPTION MEASUREMENTS; B2 SEMICONDUCTING II-VI MATERIALS; CO-DOPED ZNO; MULTIFERROIC PROPERTIES; PHYSICAL VAPOR DEPOSITION PROCESS; POLYCRYSTALLINE; PT(111); REACTIVE MAGNETRON SPUTTERING; REACTIVE MAGNETRON SPUTTERING METHOD; REMANENT POLARIZATION; ROOM TEMPERATURE; ROOM TEMPERATURE FERROMAGNETISM; SATURATED LOOPS; SEMICONDUCTING II-VI MATERIALS; XPS; XRD;

FERROELECTRICITY; FERROMAGNETISM; MAGNETIC FIELDS; MAGNETRONS; PHYSICAL VAPOR DEPOSITION; PLATINUM; SATURATION MAGNETIZATION; ZINC; ZINC OXIDE;

COPPER;

EID: 77449149239     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.044     Document Type: Article

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