Sr and Mn co-doped LaCuSO: A wide band gap oxide diluted magnetic semiconductor with TC around 200 K

Applied Physics Letters

Volumn 103, Issue 2, 2013, Pages

  Yang, Xiaojun ^a   Li, Yuke ^a,b   Shen, Chenyi ^a   Si, Bingqi ^a   Sun, Yunlei ^a   Tao, Qian ^a   Cao, Guanghan ^a   Xu, Zhuan ^a   Zhang, Fuchun ^a  

^a ZHEJIANG UNIVERSITY   (China)

^b HANGZHOU NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTED MAGNETIC SEMICONDUCTORS; HIGH TEMPERATURE; P-TYPE CONDUCTION; P-TYPE OXIDE SEMICONDUCTORS; ROOM TEMPERATURE; SPINTRONIC DEVICE; WIDE BAND GAP; WIDE BAND GAP OXIDES;

ENERGY GAP; MAGNETIC SEMICONDUCTORS;

MANGANESE;

EID: 84880480884     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4813540     Document Type: Article

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