The enhancement of photoluminescence of n-type porous silicon by Hall-effect assistance during electrochemical anodization

Electrochemistry Communications

Volumn 9, Issue 3, 2007, Pages 449-453

  Lin, Jia Chuan ^a   Tsai, Wei Chih ^b   Lee, Po Wen ^c  

^a ST JOHN'S UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c CHINESE CULTURE UNIVERSITY   (Taiwan)

Author keywords

Electrochemical anodization; Hall effect; Photoluminescence; Porous silicon; Si tips

Indexed keywords

ANODIC OXIDATION; ELECTROCHEMISTRY; ETCHING; HALL EFFECT; LORENTZ FORCE; PHOTOLUMINESCENCE;

ELECTROCHEMICAL ANODIZATION; ETCHING CURRENTS; VISIBLE PHOTOLUMINESCENCE EMISSIONS;

POROUS SILICON;

EID: 33847690223     PISSN: 13882481     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elecom.2006.10.001     Document Type: Article

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