Gate-tuned normal and superconducting transport at the surface of a topological insulator

Nature Communications

Volumn 2, Issue 1, 2011, Pages

  Sacépé, Benjamin ^a,b   Oostinga, Jeroen B ^a,c   Li, Jian ^a   Ubaldini, Alberto ^a   Couto, Nuno J G ^a   Giannini, Enrico ^a   Morpurgo, Alberto F ^a  

^a UNIVERSITY OF GENEVA   (Switzerland)

^b CNRS   (France)

^c UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; CRYSTAL; DIRAC FERMION; ELECTRON; FERMION; MAGNETIC FIELD; MOLECULAR ELECTRONICS; NANOFABRICATION; OSCILLATION; SUPERCONDUCTOR; TOPOLOGICAL INSULATOR; TRANSPORT KINETICS; CHEMISTRY; CRYSTALLIZATION; ELECTRODE; ELECTRONICS; ENGINEERING; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR; SURFACE PROPERTY;

BISMUTH; GRAPHITE; NANOMATERIAL; SELENIUM;

BISMUTH; CRYSTALLIZATION; ELECTRODES; ELECTRONICS; ELECTRONS; ENGINEERING; GRAPHITE; MAGNETIC FIELDS; NANOSTRUCTURES; NANOTECHNOLOGY; SELENIUM; SEMICONDUCTORS; SURFACE PROPERTIES;

EID: 84880275035     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms1586     Document Type: Article

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