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Materials Science in Semiconductor Processing

Volumn 16, Issue 6, 2013, Pages 1447-1453

First-principles and experimental studies of the IR emissivity of Sn-doped ZnO

(2) Zhang, Shuyuan a Cao, Quanxi a

a XIDIAN UNIVERSITY (China)

Author keywords

First principles; IR emissivity; Permittivity; Sn doped ZnO

Indexed keywords

DIELECTRIC FUNCTIONS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; EXPERIMENTAL STUDIES; FIRST PRINCIPLES; IR EMISSIVITY; SN-DOPED ZNO; SOLID STATE REACTION METHOD; THEORETICAL AND EXPERIMENTAL;

CRYSTAL STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY; SOLID STATE REACTIONS; TIN; X RAY DIFFRACTION;

ZINC OXIDE;

EID: 84880078755 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2013.04.010 Document Type: Article

Times cited : (20)

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