Unraveling the impurity location and binding in heavily doped semiconductor nanocrystals: The case of Cu in InAs nanocrystals

Journal of Physical Chemistry C

Volumn 117, Issue 26, 2013, Pages 13688-13696

  Amit, Yorai ^a   Eshet, Hagai ^b   Faust, Adam ^a   Patllola, Anitha ^c   Rabani, Eran ^b   Banin, Uri ^a   Frenkel, Anatoly I ^c  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b TEL AVIV UNIVERSITY   (Israel)

^c YESHIVA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COLLOIDAL SEMICONDUCTOR NANOCRYSTALS; CONCENTRATION DEPENDENCE; HIGH DOPING LEVEL; INAS NANOCRYSTALS; INTERSTITIAL SITES; STRUCTURAL DETAILS; X RAY ABSORPTION FINE STRUCTURES; X-RAY DIFFRACTION DATA;

DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; IMPURITIES; NANOCRYSTALS; X RAY DIFFRACTION;

SEMICONDUCTOR DOPING;

EID: 84879826463     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp4032749     Document Type: Article

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