Synthesis of Cu-doped InP nanocrystals (d-dots) with ZnSe diffusion barrier as efficient and color-tunable NIR emitters

Journal of the American Chemical Society

Volumn 131, Issue 30, 2009, Pages 10645-10651

  Xie, Renguo ^a   Peng, Xiaogang ^a  

^a UNIVERSITY OF ARKANSAS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP EMISSION; CORE/SHELL; DOPANT CONCENTRATIONS; DOPANT DIFFUSION; DOPING LEVELS; DOPING PROCESS; EMISSION WAVELENGTH; INP; INP NANOCRYSTALS; INP QUANTUM DOTS; MN-DOPED; NEAR INFRA RED; ONE POT; PHOTOLUMINESCENCE QUANTUM YIELDS; PHOTOPHYSICAL PROPERTIES;

CRYSTAL GROWTH; DIFFUSION BARRIERS; EPITAXIAL GROWTH; INFRARED DEVICES; MANGANESE; MANGANESE COMPOUNDS; NANOCRYSTALS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SYNTHESIS (CHEMICAL); WINDOWS;

DOPING (ADDITIVES);

COPPER; NANOCRYSTAL; QUANTUM DOT; SELENIDE; ZINC;

ARTICLE; BIOMEDICINE; COATED PARTICLE; CONTROLLED STUDY; DIFFUSION; DOPING; MATERIAL COATING; NEAR INFRARED SPECTROSCOPY; NONHUMAN; ONE POT SYNTHESIS; PHOTOLUMINESCENCE; QUANTUM YIELD; SEMICONDUCTOR; SPECTRAL SENSITIVITY; SYNTHESIS;

COLOR; COPPER; DIFFUSION; INDIUM; INFRARED RAYS; LUMINESCENT MEASUREMENTS; PHOSPHINES; QUANTUM DOTS; SELENIUM COMPOUNDS; TEMPERATURE; ZINC COMPOUNDS;

EID: 68049096297     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja903558r     Document Type: Article

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