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Volumn , Issue , 1999, Pages 176-181
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Measuring the effective channel length of the deep submicron MOSFET and channel broadening effect
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
MODULATION;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
CHANNEL BROADENING EFFECTS;
CHARGE DENSITY DISTRIBUTIONS;
MOSFET DEVICES;
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EID: 0032682870
PISSN: 07496877
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Article |
Times cited : (1)
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References (9)
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