Optimization of Si:H multijunction n-i-p solar cells through the development of deposition phase diagrams

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Stoke, J A ^a   Dahal, L R ^a   Jian Li, ^a   Podraza, N J ^a   Cao, Xinmin ^a   Deng, X ^a   Collins, R W ^a  

^a UNIVERSITY OF TOLEDO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; CRYSTALLINE SI WAFERS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); NANOCRYSTALLINE SILICON (NC-SI:H); PERFORMANCE PARAMETERS; REAL TIME SPECTROSCOPIC ELLIPSOMETRY; SILICON-GERMANIUM ALLOYS; SINGLE JUNCTION SOLAR CELLS;

BIFURCATION (MATHEMATICS); GERMANIUM; GERMANIUM ALLOYS; GRAIN BOUNDARIES; PHASE DIAGRAMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SILICON WAFERS; SOLAR CELLS; SPECTROSCOPIC ELLIPSOMETRY; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 84879729760     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922762     Document Type: Conference Paper

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