Evaluation of compositional depth profiles in mixed-phase (amorphous+crystalline) silicon films from real time spectroscopic ellipsometry

Thin Solid Films

Volumn 455-456, Issue , 2004, Pages 665-669

  Ferlauto, A S ^a   Ferreira, G M ^a   Koval, R J ^a   Pearce, J M ^a   Wronski, C R ^a   Collins, R W ^a   Al Jassim, M M ^b   Jones, K M ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Composition gradients; Microcrystalline silicon ( c Si:H); Mixed phase silicon films; Real time spectroscopic ellipsometry (RTSE); Silicon film growth

Indexed keywords

COMPOSITION; CRYSTALLINE MATERIALS; ELLIPSOMETRY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS; THIN FILMS; VOLUME FRACTION;

COMPOSITION GRADIENTS; MICROCRYSTALLINE SILICON; MIXED PHASE SILICON FILMS; PHASE BOUNDARY; REAL TIME SPECTROSCOPIC ELLIPSOMETRY (RTSE; SILICON FILM GROWTH;

AMORPHOUS FILMS;

EID: 17144432814     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.228     Document Type: Conference Paper

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