Hydrogen diffusion in silicon from PECVD silicon nitride

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2008, Pages

  Sheoran, Manav ^a   Kim, Dong Seop ^a   Rohatgi, Ajeet ^a   Dekkers, H F W ^b   Beaucarne, G ^b   Young, Matthew ^c   Asher, Sally ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b IMEC   (Belgium)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; ANNEALING TEMPERATURES; CRYSTALLINE SILICONS; HYDROGEN DIFFUSION; LIFETIME MEASUREMENTS; PECVD SILICON NITRIDE; SINGLE CRYSTALLINE SILICON; TRAPPING LAYERS;

AMORPHOUS ALLOYS; AMORPHOUS FILMS; ANNEALING; DEUTERIUM; HYDROGEN; HYDROGENATION; RAPID THERMAL PROCESSING; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON NITRIDE; SILICON WAFERS;

AMORPHOUS SILICON;

EID: 84879725626     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922638     Document Type: Conference Paper

References (14)

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