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Volumn , Issue , 2008, Pages

Stability of amorphous/crystalline silicon heterojunctions

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON (A-SI); DEVICE FABRICATIONS; LONG TERM STABILITY; MINORITY CARRIER LIFETIMES; ROOM TEMPERATURE; SILICON HETEROJUNCTIONS; STAEBLER-WRONSKI EFFECT; SURFACE PASSIVATION;

EID: 84879698100     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2008.4922850     Document Type: Conference Paper
Times cited : (13)

References (11)
  • 7
    • 0036948749 scopus 로고    scopus 로고
    • Very low surface recombination velocities on p-and n-type silicon wafers passivated with hydrogenated amorphous silicon films
    • S. Dauwe, J. Schmidt, R. Hezel, "Very low surface recombination velocities on p-and n-type silicon wafers passivated with hydrogenated amorphous silicon films", Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002, pp. 1246-1249.
    • (2002) Twenty-Ninth IEEE Photovoltaic Specialists Conference , pp. 1246-1249
    • Dauwe, S.1    Schmidt, J.2    Hezel, R.3
  • 9
    • 34547629266 scopus 로고    scopus 로고
    • Characterization of sinxla-si:h crystalline silicon surface passivation under uv light exposure
    • M. Tucci, L. Serenelli, S. De luliis, M. Izzi "Characterization of SiNxla-Si:H crystalline silicon surface passivation under UV light exposure, " Thin Solid Films 515 (2007) p. 7625-7628.
    • (2007) Thin Solid Films , vol.515 , pp. 7625-7628
    • Tucci, M.1    Serenelli, L.2    De Luliis, S.3    Izzi, M.4
  • 10
    • 34547093404 scopus 로고    scopus 로고
    • Model for a-si:h/c-si interface recombination based on the amphoteric nature of silicon dangling bonds
    • S. Olibet, E. Vallat-Sauvain, and C. Ballif, "Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds, " Physical Review B, vol. 76, p. 35326, 2007.
    • (2007) Physical Review B , vol.76 , pp. 35326
    • Olibet, S.1    Vallat-Sauvain, E.2    Ballif, C.3
  • 11
    • 39449139356 scopus 로고    scopus 로고
    • Surface passivation and heterojunction cells on si (100) and (111) wafers using dc and rf plasma deposited si:h thin films
    • U. K. Das, M. Z. Burrows, M. Lu, S. Bowden, R. W. Birkmire, "Surface passivation and heterojunction cells on Si (100) and (111) wafers using dc and rf plasma deposited Si:H thin films" Applied Physics Letters, v 92, n 6, (2008) p. 063504
    • (2008) Applied Physics Letters, v , vol.92 , Issue.6 , pp. 063504
    • Das, U.K.1    Burrows, M.Z.2    Lu, M.3    Bowden, S.4    Birkmire, R.W.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.