Valley Chern numbers and boundary modes in gapped bilayer graphene

Proceedings of the National Academy of Sciences of the United States of America

Volumn 110, Issue 26, 2013, Pages 10546-10551

  Zhang, Fan ^a   MacDonald, Allan H ^b   Mele, Eugene J ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Few layer grapheme; Layer stacking walls; Topological defects; Topological states

Indexed keywords

GRAPHENE;

ARTICLE; BILAYER MEMBRANE; ELECTRIC FIELD; ELECTRONICS; MATHEMATICAL COMPUTING; MATHEMATICAL MODEL; PRIORITY JOURNAL; QUANTUM MECHANICS;

EID: 84879544777     PISSN: 00278424     EISSN: 10916490     Source Type: Journal    
DOI: 10.1073/pnas.1308853110     Document Type: Article

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