Thermal conductivity of SiC calculated by molecular dynamics

Japanese Journal of Applied Physics

Volumn 47, Issue 12, 2008, Pages 8898-8901

  Kawamura, Takahiro ^a,b   Hori, Daisuke ^a   Kangawa, Yoshihiro ^a,c   Kakimoto, Koichi ^a,c   Yoshimura, Masashi ^b   Mori, Yusuke ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c KYUSHU UNIVERSITY   (Japan)

Author keywords

Impurity; Molecular dynamics; Silicon carbide; Thermal conductivity

Indexed keywords

CARBON FIBER REINFORCED PLASTICS; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; IMPURITIES; MOLECULAR DYNAMICS; SILICON CARBIDE; THERMAL CONDUCTIVITY; THERMAL INSULATING MATERIALS; THERMOANALYSIS; THERMODYNAMIC PROPERTIES; THERMOELECTRICITY;

EFFECTS OF IMPURITIES; GREEN-KUBO; IMPURITY; IMPURITY CONCENTRATIONS; MOLECULAR DYNAMICS SIMULATIONS; POLYTYPES; SIC POLYTYPES; TERSOFF POTENTIALS;

DYNAMICS;

EID: 59349097273     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.8898     Document Type: Article

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