Investigation into short-circuit ruggedness of 1.2 kV 4H-SiC MOSFETs

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 1123-1126

  Nakao, Y ^a   Watanabe, S ^a   Miura, N ^a   Imaizumi, M ^a   Oomori, T ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

High voltage; Power MOSFET; Short circuit

Indexed keywords

HVDC POWER TRANSMISSION; SHORT CIRCUIT CURRENTS; SILICON CARBIDE; TIMING CIRCUITS;

4H-SIC MOSFETS; DC-BUS VOLTAGES; GATE VOLTAGES; HIGH TEMPERATURE; HIGH VOLTAGE; SHORT CIRCUIT RUGGEDNESS; SIC MOSFETS; SYSTEM REQUIREMENTS;

POWER MOSFET;

EID: 63849184340     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (2)

1. N. Miura, K. Fujihira, Y. Nakao, T. Watanabe, Y. Tarui, S. Kinouchi, M. Imaizumi and T. Oomori: Proc. ISPSD'2006 (2006), p. 261
2. D. C. Wunsch and R. R. Bell: IEEE Trans. Nuclear Science NS-15 (1968), p. 244