Effects of free electrons and quantum confinement in ultrathin ZnO films: A comparison between undoped and Al-doped ZnO

Optics Express

Volumn 21, Issue 12, 2013, Pages 14131-14138

  Li, X D ^a   Chen, T P ^a   Liu, P ^a   Liu, Y ^b   Leong, K C ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; ENERGY GAP; METALLIC FILMS; ZINC OXIDE;

ABSORPTION EDGES; AL-DOPED ZNO THIN FILMS; BAND GAP ENERGY; EXCITON ABSORPTIONS; EXCITON-BINDING ENERGY; EXCITONIC ABSORPTION; FREE ELECTRON; OPTICAL ABSORPTION MEASUREMENT;

EXCITONS;

ALUMINUM; ARTIFICIAL MEMBRANE; METAL NANOPARTICLE; ZINC OXIDE;

ARTIFICIAL MEMBRANE; CHEMICAL MODEL; CHEMISTRY; COMPARATIVE STUDY; COMPUTER SIMULATION; ELECTRON; ELECTRON TRANSPORT; MATERIALS TESTING; QUANTUM THEORY; ULTRASTRUCTURE; ARTICLE;

ALUMINUM; COMPUTER SIMULATION; ELECTRON TRANSPORT; ELECTRONS; MATERIALS TESTING; MEMBRANES, ARTIFICIAL; METAL NANOPARTICLES; MODELS, CHEMICAL; QUANTUM THEORY; ZINC OXIDE;

EID: 84879386952     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.014131     Document Type: Article

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