Free-carrier effects on zero- And one-phonon absorption onsets of n-type ZnO

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 10, 2005, Pages 7275-7280

  Makino, Takayuki ^a,b   Segawa, Yusaburo ^a   Yoshida, Shin ^c   Tsukazaki, Atsushi ^c   Ohtomo, Akira ^c   Kawasaki, Masashi ^c,e   Koinuma, Hideomi ^d,e  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Donor doping; Fermi edge singularity; Laser MBE; Optical absorption; Phonon interaction; Random potential; Zinc oxide

Indexed keywords

ENERGY GAP; GALLIUM; HALL EFFECT; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; ZINC OXIDE;

DONOR DOPING; LASER MBE; RANDOM POTENTIAL;

PHONONS;

EID: 31644441871     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.7275     Document Type: Article

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