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Angewandte Chemie - International Edition

Volumn 52, Issue 26, 2013, Pages 6731-6734

The stoichiometry of electroless silicon etching in solutions of V 2O5 and HF

(2) Kolasinski, Kurt W a Barclay, William B a

a WEST CHESTER UNIVERSITY (United States)

Author keywords

electrochemistry; porous silicon; reaction mechanisms; stain etching; surface chemistry

Indexed keywords

ELECTROLESS; ELECTROLESS ETCHINGS; NANOCRYSTALLINES; REACTION MECHANISM; SILICON ETCHING; SILICON VALENCE BAND; STAIN ETCHING; UV/VIS SPECTRA;

ELECTROCHEMISTRY; ETCHING; NANOCRYSTALLINE SILICON; OXIDANTS; STOICHIOMETRY; SURFACE CHEMISTRY;

POROUS SILICON;

EID: 84879372612 PISSN: 14337851 EISSN: 15213773 Source Type: Journal
DOI: 10.1002/anie.201300755 Document Type: Article

Times cited : (34)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.