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Physica Status Solidi (A) Applications and Materials Science

Volumn 210, Issue 6, 2013, Pages 1133-1136

Enhanced efficiency in InGaN-based photovoltaic devices combined with nanocrystalline Bi2O3/P3HT heterojunction structures

(5) Lai, Chun Feng a Chang, Chung Chieh b Wen, Min Hsueh b Lin, Chung Kwei c Wu, Mau Kuen b

a FENG CHIA UNIVERSITY (Taiwan)

b INSTITUTE OF PHYSICS (Taiwan)

c TAIPEI MEDICAL UNIVERSITY (Taiwan)

Author keywords

Bi2O3; heterojunctions; InGaN; P3HT; photovoltaic effects

Indexed keywords

EFFICIENCY IMPROVEMENT; ENHANCED EFFICIENCY; HETEROJUNCTION STRUCTURES; INGAN; P3HT; PHOTOVOLTAIC DEVICES; POWER CONVERSION EFFICIENCIES; SOLAR-CELL APPLICATIONS;

CONVERSION EFFICIENCY; PHOTOVOLTAIC EFFECTS; PULSED LASER DEPOSITION;

HETEROJUNCTIONS;

EID: 84879247478 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.201228847 Document Type: Article

Times cited : (4)

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