Photovoltaic effect of BiFeO3/poly(3-hexylthiophene) heterojunction

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 10-11, 2011, Pages 367-369

  Liu, Zhike ^a   Yan, Feng ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

Heterojunctions; Hexylthiophene; Photovoltaics

Indexed keywords

BISMUTH COMPOUNDS; CARRIER MOBILITY; HETEROJUNCTIONS; II-VI SEMICONDUCTORS; IRON COMPOUNDS; MAGNETIC SEMICONDUCTORS; OXIDE SEMICONDUCTORS; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SOLAR CELLS; SOLAR POWER GENERATION; TITANIUM DIOXIDE; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

HEXYLTHIOPHENE; HYBRID SOLAR CELLS; J-V CHARACTERISTICS; MULTIFERROIC MATERIALS; PHOTOVOLTAIC DEVICES; PHOTOVOLTAICS; POLY (3-HEXYLTHIOPHENE); POWER CONVERSION EFFICIENCIES;

PHOTOVOLTAIC EFFECTS;

EID: 80155189608     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105411     Document Type: Article

References (20)

1. S. J. Clark and J. Robertson, Appl. Phys. Lett. 90, 132903 (2007).
2. A. J. Hauser et al., Appl. Phys. Lett. 92, 222901 (2008).
3. A. M. Glass, D. Linde, and T. J. Negran, Appl. Phys. Lett. 25, 233 (1974).
4. M. Qin, K. Yao, and Y. C. Liang, Appl. Phys. Lett. 93, 122904 (2008).
5. T. Choi et al., Science 324, 63 (2009).
6. S. Y. Yang et al., Nature Nanotechnol. 5, 143 (2010).
7. W. Ji, K. Yao, and Y. C. Liang, Adv. Mater. 22, 1763 (2010).
8. J. Y. Kim et al., Science 317, 222 (2007).
9. Q. D. Tai, X. Z. Zhao, and F. Yan, J. Mater. Chem. 20, 7366 (2010).
10. Y.Y. Lin et al., J. Am. Chem. Soc. 131, 3644 (2009).
11. Z. H. Sun, J. H. Li, C. M. Liu, S. H. Yang, and F. Yan, Adv. Mater. 23, 3648 (2011).
12. W. J. E. Beek, M. M. Wienk, and R. A. J. Janssen, Adv. Mater. 16, 1009 (2004).
13. S. J. Wu, Q. D. Tai, and F. Yan, J. Phys. Chem. C 114, 6197 (2010).
14. S. M. Mok, F. Yan, and H. L. W. Chan, Appl. Phys. Lett. 93, 023310 (2008).
15. S. J. Wu, J. H. Li, Q. D. Tai, and F. Yan, J. Phys. Chem. C 114, 21873 (2010).
16. Q. D. Tai, J. H. Li, Z. K. Liu, Z. H. Sun, X. Z. Zhao, and F. Yan, J. Mater. Chem. 21, 6848 (2011).
17. H. Yang et al., Appl. Phys. Lett. 92, 102113 (2008).
18. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 92.
19. S. K. Singh, K. Maruyama, and H. Ishiwara, Appl. Phys. Lett. 91, 112913 (2007).
20. M. C. Scharber et al., Adv. Mater. 18, 789 (2006).