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Applied Physics Letters

Volumn 94, Issue 2, 2009, Pages

Energy levels of oxygen vacancies in BiFeO3by screened exchange

(2) Clark, S J a Robertson, J b

a DURHAM UNIVERSITY (United Kingdom)

b UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; ELECTRON MOBILITY; OXYGEN; SEMICONDUCTING BISMUTH COMPOUNDS; VACANCIES;

ATOMIC CONFIGURATIONS; BAND GAPS; CONDUCTION BAND EDGES; CORRELATION ENERGIES; DEFECT CHARGES; DEFECT FORMATION ENERGIES; ELECTRONIC CONDUCTIVITIES; ENERGY LEVELS; HUBBARD; LOCAL DENSITIES;

OXYGEN VACANCIES;

EID: 58349097966 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3070532 Document Type: Article

Times cited : (121)

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