Upgraded silicon nanowires by metal-assisted etching of metallurgical silicon: A new route to nanostructured solar-grade silicon

Advanced Materials

Volumn 25, Issue 23, 2013, Pages 3187-3191

  Li, Xiaopeng ^a,b   Xiao, Yanjun ^c   Bang, Jin Ho ^c   Lausch, Dominik ^d   Meyer, Sylke ^d   Miclea, Paul Tiberiu ^b   Jung, Jin Young ^c   Schweizer, Stefan L ^b   Lee, Jung Ho ^c   Wehrspohn, Ralf B ^b,e  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^c Hanyang University   (South Korea)

^d FRAUNHOFER CENTER FOR SILICON PHOTOVOLTAICS CSP   (Germany)

^e FRAUNHOFER INSTITUTE FOR MECHANICS OF MATERIALS IWM   (Germany)

Author keywords

metal assisted chemical etching; metal impurities; metallurgical silicon; photoelectrochemical cell; silicon nanowire

Indexed keywords

METAL IMPURITIES; METAL-ASSISTED CHEMICAL ETCHING; NANO-STRUCTURED; PURIFICATION EFFECT; SILICON NANOWIRES; SOLAR-GRADE SILICONS;

ETCHING; METALLURGY; METALS; NANOWIRES; PHOTOELECTROCHEMICAL CELLS; PURIFICATION;

SILICON;

HYDROGEN; NANOWIRE; SILICON;

ARTICLE; CHEMISTRY; ELECTRODE; POROSITY; SOLAR ENERGY; SURFACE PROPERTY; ULTRASTRUCTURE;

ELECTRODES; HYDROGEN; NANOWIRES; POROSITY; SILICON; SOLAR ENERGY; SURFACE PROPERTIES;

EID: 84879097672     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201300973     Document Type: Article

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