Tailoring the band gap and transport properties of Cu3BiS 3 nanopowders for photodetector applications

Journal of Nanoscience and Nanotechnology

Volumn 13, Issue 6, 2013, Pages 3901-3909

  Murali, Banavoth ^a   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Band gap tailoring; Cu3BiS3; IR photo detection; Solvothermal

Indexed keywords

METALLIC BEHAVIORS; NEAR IR PHOTODETECTOR; PHOTO DETECTION; REACTION PROFILE; SEMICONDUCTING BEHAVIOR; SOLVOTHERMAL; TECHNOLOGICAL APPLICATIONS; TEMPERATURE COEFFICIENT OF RESISTANCE;

ACTIVATION ENERGY; ENERGY GAP; PHOTODETECTORS; PHOTONS;

TRANSPORT PROPERTIES;

EID: 84878691020     PISSN: 15334880     EISSN: 15334899     Source Type: Journal    
DOI: 10.1166/jnn.2013.7133     Document Type: Article

References (28)

1. W. Shockley and H. J. Queisser, J. Appl. Phy. 32, 510 (1961).
2. K. Bothe, G. H. Bauer, and T. Unold, Thin Solid Films 403, 453 (2002).
3. I. Dirnstorfer, M. Wagner, D. M. Hofmann, M. D. Lampert, F. Karg, and B. K. Meyer, Phys. Status Solidi (a) 168, 163 (1998).
4. T. Unold and H. W. Schock, Ann. Rev. Mater. Res. 41, 297 (2011).
5. D. F. Marron, T. Glatzel, A. Meeder, T. Schedel-Niedrig, S. Sadewasser, and M. C. Lux-Steiner, Appl. Phys. Lett. 85, 3755 (2004).
6. C. Tablero, Progress in Prog. Photovolt. Res. Appl. n/a (2012), DOI: 10.1002/pip.2173.
7. F. Mesa, G. Gordillo, T. Dittrich, K. Ellmer, R. Baier, and S. Sadewasser, Appl. Phys. Lett. 96 (2010).
8. Y. Zeng, H. Li, B. Qu, B. Xiang, L. Wang, Q. Zhang, Q. Li, T. Wang, and Y. Wang, Cryst. Eng. Comm. 14, 550 (2012).
9. N. J. Gerein and J. A. Haber, Chem. Mater. 18, 6297 (2006).
10. J. Hu, B. Deng, C. Wang, K. Tang, and Y. Qian, Mater. Chem. Phy. 78, 650 (2003).
11. J. Zhong, W. Xiang, Q. Cai, and X. Liang, Mater. Lett. 70, 63 (2012).
12. M. Jin, G. Hao, X. Sun, and W. Chen, Rev. Nanosci. Nanotechnol. 1, 3 (2012).
13. T. E. Vandervelde and S. Krishna, J. Nanosci. Nanotechnol. 10, 1450 (2010).
14. V. Kocman and E. W. Nuffield, Acta Crystallogr. Sect. B 29, 2528 (1973).
15. D. Chen, G. Shen, K. Tang, X. Liu, Y. Qian, and G. Zhou, J. Cryst. Growth 253, 512 (2003).
16. Z. Y. Wang, Q. F. Lu, X. S. Fang, X. K. Tian, and L. D. Zhang, Adv. Funct. Mater. 16, 661 (2006).
17. O. Krichevsky and J. Stavans, Phys. Rev. Lett. 70, 1473 (1993).
18. W. H. Han, X. K. Chen, E. Q. Xie, G. Wu, J. P. Yang, R. Wang, S. Z. Cao, and Y. L. Wang, Surf. Coat. Technol. 201, 5680 (2007).
19. V. Estrella, M. T. S. Nair, and P. K. Nair, Semicond. Sci. Technol. 18, 190 (2003).
20. Q. Yang, X. Guo, W. Wang, Y. Zhang, S. Xu, D. H. Lien, and Z. L. Wang, ACS Nano 4, 6285 (2010).
21. J. Cheng, Y. Zhang, and R. Guo, J. Cryst. Growth 310, 57 (2008).
22. T. Ueda, Z. An, K. Hirakawa, and S. Komiyama, J. Appl. Phys. 103, 093109 (2008).
23. Y. K. Su, S. M. Peng, L. W. Ji, C. Z. Wu, W. B. Cheng, and C. H. Liu, Langmuir 26, 603 (2009).
24. A. Shetty and K. K. Nanda, Mater. Express 2, 251 (2012).
25. C.-Y. Lu, S.-P. Chang, S.-J. Chang, C.-L. Hsu, Y.-Z. Chiou, and I. C. Chen, J. Nanosci. Nanotechnol. 10, 1135 (2010).
26. L. A. A. Pettersson, L. S. Roman, and O. Inganas, J. Appl. Phys. 86, 487 (1999).
27. C. Soci, A. Zhang, X.-Y. Bao, H. Kim, Y. Lo, and D. Wang, J. Nanosci. Nanotechnol. 10, 1430 (2010).
28. C. Yan and P. S. Lee, Sci. Adv. Mater. 4, 241 (2012).