SCOPUS 정보 검색 플랫폼

Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 3, 2013, Pages 1052-1056

Vertical organic field effect transistor using sulfonated polyaniline/aluminum bilayer as intermediate electrode

(4) Seidel, Keli F a Rossi, Lucieli a Mello, Regina M Q a Hümmelgen, Ivo A a

a FEDERAL UNIVERSITY OF PARANÁ (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DRAIN CURRENT; ELECTRODES; POLYANILINE; SILICA; SILICON;

ALUMINUM LAYERS; C60 FULLERENES; GATE INSULATOR; GATE VOLTAGES; HIGH CURRENT DENSITIES; SOURCE AND DRAINS; SULFONATED POLYANILINE; SULFONATED POLYANILINE FILMS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84878581751 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-012-0876-5 Document Type: Article

Times cited : (25)

References (19)

1
- 38349170134
- 10.1021/jp071753b 1:CAS:528:DC%2BD2sXhtlyjsbbE
- C.A. Di, G. Yu, Y. Liu, D. Zhu, J. Phys. Chem. B 111, 14083 (2007)
- (2007) J. Phys. Chem. B , vol.111 , pp. 14083
- Di, C.A.¹ Yu, G.² Liu, Y.³ Zhu, D.⁴

2
- 19144368309
- 10.1063/1.1821629 1:CAS:528:DC%2BD2cXhtValtbbP
- L. Ma, Y. Yang, Appl. Phys. Lett. 85, 5084 (2004)
- (2004) Appl. Phys. Lett. , vol.85 , pp. 5084
- Ma, L.¹ Yang, Y.²

3
- 34548287006
- 10.1063/1.2773749
- S.H. Li, Z. Xu, L. Ma, C.W. Chu, Y. Yang, Appl. Phys. Lett. 91, 083507 (2007)
- (2007) Appl. Phys. Lett. , vol.91 , pp. 083507
- Li, S.H.¹ Xu, Z.² Ma, L.³ Chu, C.W.⁴ Yang, Y.⁵

4
- 34548448917
- 10.1063/1.2778751
- Z. Xu, S.H. Li, L. Ma, G. Li, Y. Yang, Appl. Phys. Lett. 91, 092911 (2007)
- (2007) Appl. Phys. Lett. , vol.91 , pp. 092911
- Xu, Z.¹ Li, S.H.² Ma, L.³ Li, G.⁴ Yang, Y.⁵

5
- 33748492586
- 10.1063/1.2347152
- K. Nakamura, T. Hata, A. Yoshizawa, K. Obata, H. Endo, K. Kudo, Appl. Phys. Lett. 89, 103525 (2006)
- (2006) Appl. Phys. Lett. , vol.89 , pp. 103525
- Nakamura, K.¹ Hata, T.² Yoshizawa, A.³ Obata, K.⁴ Endo, H.⁵ Kudo, K.⁶

6
- 54949143973
- 10.1002/adma.200800601 1:CAS:528:DC%2BD1cXht1Glsr3P
- B. Liu, M.A. McCarthy, Y. Yoon, D.Y. Kim, Z. Wu, F. So, P.H. Holloway, J.R. Reynilds, J. Guo, A.G. Rinzler, Adv. Mater. 20, 3605 (2008)
- (2008) Adv. Mater. , vol.20 , pp. 3605
- Liu, B.¹ McCarthy, M.A.² Yoon, Y.³ Kim, D.Y.⁴ Wu, Z.⁵ So, F.⁶ Holloway, P.H.⁷ Reynilds, J.R.⁸ Guo, J.⁹ Rinzler, A.G.¹⁰

7
- 81355142783
- 10.1063/1.3660406
- L. Rossi, K.F. Seidel, W.S. Machado, I.A. Hümmelgen, J. Appl. Phys. 110, 94508 (2011)
- (2011) J. Appl. Phys. , vol.110 , pp. 94508
- Rossi, L.¹ Seidel, K.F.² Machado, W.S.³ Hümmelgen, I.A.⁴

8
- 39449114810
- 10.1016/j.tsf.2007.04.130 1:CAS:528:DC%2BD1cXitlGktro%3D
- Y. Watanabe, H. Iechi, K. Kudo, Thin Solid Films 516, 2731 (2008)
- (2008) Thin Solid Films , vol.516 , pp. 2731
- Watanabe, Y.¹ Iechi, H.² Kudo, K.³

9
- 66749090583
- 10.1002/adma.200802506 1:CAS:528:DC%2BD1MXls12qtLc%3D
- S.S. Cheng, Y.C. Chuang, D. Kekuda, C.W. Ou, M.C. Wu, C.W. Chu, Adv. Mater. 21, 1860 (2009)
- (2009) Adv. Mater. , vol.21 , pp. 1860
- Cheng, S.S.¹ Chuang, Y.C.² Kekuda, D.³ Ou, C.W.⁴ Wu, M.C.⁵ Chu, C.W.⁶

10
- 71549132709
- 10.1063/1.3266855
- A.J. Bem-Sasson, E. Avnon, E. Ploshnik, O. Globerman, R. Shenhar, G.L. Frey, N. Tessler, Appl. Phys. Lett. 95, 213301 (2009)
- (2009) Appl. Phys. Lett. , vol.95 , pp. 213301
- Bem-Sasson, A.J.¹ Avnon, E.² Ploshnik, E.³ Globerman, O.⁴ Shenhar, R.⁵ Frey, G.L.⁶ Tessler, N.⁷

11
- 62649119604
- 10.1016/j.orgel.2009.02.003 1:CAS:528:DC%2BD1MXjsFSnurc%3D
- K.I. Nakayama, S.Y. Fujimoto, M. Yokoyama, Org. Electron. 10, 543 (2009)
- (2009) Org. Electron. , vol.10 , pp. 543
- Nakayama, K.I.¹ Fujimoto, S.Y.² Yokoyama, M.³

12
- 80052409844
- 10.1063/1.3622291
- A.J. Ben-Sasson, N. Tessler, J. Appl. Phys. 110, 044501 (2011)
- (2011) J. Appl. Phys. , vol.110 , pp. 044501
- Ben-Sasson, A.J.¹ Tessler, N.²

13
- 0542430222
- Ohio, ASM International
- T. B. Massalski (editor-in-Chief), H. Okamoto, P. R. Subramanian, L. Kacprzark (eds.), Binary Alloy Phase Diagrams, Materials Park, Vol. 2, Ohio, ASM International (1990), p. 1811
- (1990) Binary Alloy Phase Diagrams, Materials Park , vol.2 , pp. 1811
- Massalski, T.B.¹ Okamoto, H.² Subramanian, P.R.³ Kacprzark, L.⁴

14
- 34248160962
- 10.1016/j.polymer.2007.04.013 1:CAS:528:DC%2BD2sXlt1Kgsr0%3D
- C.H. Yang, L.R. Huang, Y.K. Chih, W.C. Lin, F.J. Liu, T.L. Wang, Polymer 48, 3237 (2007)
- (2007) Polymer , vol.48 , pp. 3237
- Yang, C.H.¹ Huang, L.R.² Chih, Y.K.³ Lin, W.C.⁴ Liu, F.J.⁵ Wang, T.L.⁶

15
- 58249085339
- 10.1007/s10854-008-9645-x
- W.J. da Silva, I.A. Hümmelgen, R.M.Q. Mello, J. Mater. Sci.: Mater. Electron. 20, 123 (2009)
- (2009) J. Mater. Sci.: Mater. Electron. , vol.20 , pp. 123
- Da Silva, W.J.¹ Hümmelgen, I.A.² Mello, R.M.Q.³

16
- 51849090954
- 10.1063/1.2967731
- W.J. Silva, I.A. Hümmelgen, R.M.Q. Mello, D. Ma, Appl. Phys. Lett. 93, 053301 (2008)
- (2008) Appl. Phys. Lett. , vol.93 , pp. 053301
- Silva, W.J.¹ Hümmelgen, I.A.² Mello, R.M.Q.³ Ma, D.⁴

17
- 0004005306
- Wiley New York
- S.M. Sze, Physics of semiconductor devices (Wiley, New York, 1981)
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

18
- 80955175493
- 10.1016/j.orgel.2011.04.017 1:CAS:528:DC%2BC3MXns1Klt70%3D
- A.N. Aleshin, I.P. Shcherbakov, V.N. Petrov, A.N. Titkov, Org. Electron. 12, 1285 (2011)
- (2011) Org. Electron. , vol.12 , pp. 1285
- Aleshin, A.N.¹ Shcherbakov, I.P.² Petrov, V.N.³ Titkov, A.N.⁴

19
- 0001141075
- 10.1088/0022-3727/32/19/314 1:CAS:528:DyaK1MXmslaktrk%3D
- D.G. Ma, I.A. Hümmelgen, B. Hu, F.E. Karasz, J. Phys. D Appl. Phys. 32, 2568 (1999)
- (1999) J. Phys. D Appl. Phys. , vol.32 , pp. 2568
- Ma, D.G.¹ Hümmelgen, I.A.² Hu, B.³ Karasz, F.E.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.