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Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter

(4) Da Silva, Wilson J a Hümmelgen, Ivo A a Mello, Regina M Q a Ma, Dongge b

a FEDERAL UNIVERSITY OF PARANÁ (Brazil)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; FULLERENES; HETEROJUNCTION BIPOLAR TRANSISTORS; POLYANILINE;

BASE CURRENTS; C60 FULLERENES; COLLECTOR VOLTAGES; COMMON-EMITTER CURRENT GAINS; ELECTRICAL MEASUREMENTS; LOW VOLTAGES; METAL-BASE; N-TYPE SILICONS; SULFONATED POLYANILINES; VERTICAL ARCHITECTURES;

TRANSISTORS;

EID: 51849090954 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2967731 Document Type: Article

Times cited : (24)

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