Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates

Applied Physics Letters

Volumn 95, Issue 21, 2009, Pages

  Ben Sasson, Ariel J ^a   Avnon, Eran ^a   Ploshnik, Elina ^b   Globerman, Oded ^a   Shenhar, Roy ^b   Frey, Gitti L ^a   Tessler, Nir ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE FABRICATIONS; DEVICE MODELS; DEVICE OPERATIONS; FABRICATION PROCESS; FABRICATION TECHNIQUE; GRID-LIKE; HIGH RESOLUTION; METAL ELECTRODES; NANOTEMPLATES; ON/OFF RATIO; ORGANIC ELECTRONICS; ORGANIC FIELD EFFECT TRANSISTORS; PATTERNED ELECTRODE; SELF-ASSEMBLED; SOFT LITHOGRAPHY; VERTICAL FIELDS;

BLOCK COPOLYMERS; COPOLYMERIZATION; FABRICATION; LITHOGRAPHY;

FIELD EFFECT TRANSISTORS;

EID: 71549132709     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3266855     Document Type: Article

References (18)

1. D. C. Mayer, N. A. Masnari, and R. J. Lomax, IEEE Trans. Electron Devices 0018-9383 27, 956 (1980). 10.1109/T-ED.1980.19963
2. Z. Ravnoy, L. T. Lu, E. Kapon, S. Mukai, S. Margalit, and A. Yariv, Appl. Phys. Lett. 0003-6951 45, 258 (1984). 10.1063/1.95204 (Pubitemid 14601469)
3. D. Klaes, J. Moers, A. Tonnesmann, S. Wickenhauser, L. Vescan, M. Marso, T. Grabolla, M. Grimm, and H. Luth, Thin Solid Films 0040-6090 336, 306 (1998). 10.1016/S0040-6090(98)01248-6
4. N. Stutzmann, R. H. Friend, and H. Sirringhaus, Science 0036-8075 299, 1881 (2003). 10.1126/science.1081279 (Pubitemid 36356655)
5. L. P. Ma and Y. Yang, Appl. Phys. Lett. 0003-6951 85, 5084 (2004). 10.1063/1.1821629
6. S. Fujimoto, K. Nakayama, and M. Yokoyama, Appl. Phys. Lett. 87, 133503 (2005). 10.1063/1.2061866
7. Z. Xu, S. H. Li, L. Ma, G. Li, and Y. Yang, Appl. Phys. Lett. 91, 092911 (2007). 10.1063/1.2778751 (Pubitemid 47352329)
8. E. D. Mentovich, B. Belgorodsky, I. Kalifa, H. Cohen, and S. Richter, Nano Lett. 1530-6984 9, 1296 (2009). 10.1021/nl802694k
9. J. P. M. Serbena, J. Y. Huang, D. Ma, Z. Y. Wang, and I. A. Hummelgen, Org. Electron. 1566-1199 10, 357 (2009). 10.1016/j.orgel.2008.11.001
10. Y. C. Chao, H. F. Meng, and S. F. Horng, Appl. Phys. Lett. 88, 223510 (2006). 10.1063/1.2207838 (Pubitemid 43839266)
11. N. Tessler and Y. Roichman, Appl. Phys. Lett. 0003-6951 79, 2987 (2001). 10.1063/1.1415374 (Pubitemid 33608122)
12. Y. Roichman and N. Tessler, Appl. Phys. Lett. 0003-6951 80, 151 (2002). 10.1063/1.1431691 (Pubitemid 34069742)
13. K. A. Cavicchi and T. P. Russell, Macromolecules 0024-9297 40, 1181 (2007). 10.1021/ma061163w (Pubitemid 46383773)
14. R. A. Segalman, Mater. Sci. Eng. R. 0927-796X 48, 191 (2005).
15. M. J. Fasolka, P. Banerjee, A. M. Mayes, G. Pickett, and A. C. Balazs, Macromolecules 0024-9297 33, 5702 (2000). 10.1021/ma990021h (Pubitemid 30906018)
16. K. Aissou, M. Kogelschatz, T. Baron, and P. Gentile, Surf. Sci. 0039-6028 601, 2611 (2007). 10.1016/j.susc.2006.12.017 (Pubitemid 46962604)
17. H. B. Michaelson, J. Appl. Phys. 0021-8979 48, 4729 (1977). 10.1063/1.323539 (Pubitemid 8557760)
18. P. Peumans, A. Yakimov, and S. R. Forrest, J. Appl. Phys. 0021-8979 93, 3693 (2003). 10.1063/1.1534621