Improved electroluminescence from ZnO light-emitting diodes by p-type MgZnO electron blocking layer

Optics Express

Volumn 21, Issue 10, 2013, Pages 11698-11704

  Choi, Yong Seok ^a   Kang, Jang Won ^a   Kim, Byeong Hyeok ^a   Na, Dong Keun ^a   Lee, Sang Jun ^a   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; ZINC; ZINC OXIDE;

CARRIER DISTRIBUTIONS; DEEP LEVEL EMISSION; ELECTRON BLOCKING LAYER; ELECTRON OVERFLOW; N-TYPE ZNO; P-TYPE ZNO LAYERS; ULTRAVIOLET EMISSION; ZNO LIGHT-EMITTING DIODES;

LIGHT EMITTING DIODES;

MAGNESIUM OXIDE; ZINC OXIDE;

CHEMISTRY; DEVICE FAILURE ANALYSIS; DEVICES; ELECTRON; EQUIPMENT DESIGN; ILLUMINATION; LUMINESCENCE; SEMICONDUCTOR; ARTICLE; EQUIPMENT; EQUIPMENT FAILURE;

ELECTRONS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHTING; LUMINESCENT MEASUREMENTS; MAGNESIUM OXIDE; SEMICONDUCTORS; ZINC OXIDE;

EID: 84878579950     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.011698     Document Type: Article

References (22)

1. K. Watanabe, T. Taniguchi, and H. Kanda, "Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal," Nat. Mater. 3(6), 404-409 (2004).
2. Y. Narukawa, I. Niki, K. Izuno, M. Yamada, Y. Murazaki, and T. Mukai, "Phosphor-conversion white light emitting diode using InGaN near-ultraviolet chip," Jpn. J. Appl. Phys. 41(Part 2, No. 4A 4A), L371-L373 (2002). (Pubitemid 34751827)
3. D. E. Sunstein, "A scatter communications link at ultraviolet frequencies," Thesis, Massachusetts Institute of Technology, (1968).
4. T. Nishida, N. Kobayashi, and T. Ban, "GaN-free transparent ultraviolet light-emitting diodes," Appl. Phys. Lett. 82(1), 1-3 (2003).
5. J. Shakya, K. H. Kim, J. Y. Lin, and H. X. Jiang, "Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes," Appl. Phys. Lett. 85(1), 142-144 (2004).
6. J. P. Zhang, X. Hu, Y. Bilenko, J. Deng, A. Lunev, M. S. Shur, R. Gaska, M. Shatalov, J. W. Yang, and M. A. Khan, "AlGaN-based 280 nm light-emitting diodes with continuous-wave power exceeding 1 mW at 25 mA," Appl. Phys. Lett. 85(23), 5532-5534 (2004). (Pubitemid 40162515)
7. S. Chu, M. Olmedo, Z. Yang, J. Kong, and J. Liu, "Electrically pumped ultraviolet ZnO diode lasers on Si," Appl. Phys. Lett. 93(18), 181106 (2008).
8. C. Zhang, F. Zhang, T. Xia, N. Kumar, J. I. Hahm, J. Liu, Z. L. Wang, and J. Xu, "Low-threshold two-photon pumped ZnO nanowire lasers," Opt. Express 17(10), 7893-7900 (2009).
9. D. C. Look, "Recent advances in ZnO materials and devices," Mater. Sci. Eng. B 80(1-3), 383-387 (2001). (Pubitemid 32331341)
10. D. K. Hwang, M. S. Oh, J. H. Lim, and S. J. Park, "ZnO thin films and light-emitting diodes," J. Phys. D Appl. Phys. 40(22), R387-R412 (2007).
11. Y. S. Choi, J. W. Kang, D. K. Hwang, and S. J. Park, "Recent advances in ZnO-based light-emitting diodes," IEEE Trans. Electron. Dev. 57(1), 26-41 (2010).
12. J. Z. Zhao, H. W. Liang, J. C. Sun, J. M. Bian, Q. J. Feng, L. Z. Hu, H. Q. Zhang, X. P. Liang, Y. M. Luo, and G. T. Du, "Electroluminescence from n-ZnO/p-ZnO:Sb homojunction light emitting diode on sapphire substrate with metal-organic precursors doped p-type ZnO layer grown by MOCVD technology," J. Phys. D Appl. Phys. 41(19), 195110 (2008).
13. Y. J. Zeng, Z. Z. Ye, Y. F. Lu, W. Z. Xu, L. P. Zhu, J. Y. Huang, H. P. He, and B. H. Zhao, "Plasma-free nitrogen doping and homojunction light-emitting diodes based on ZnO," J. Phys. D Appl. Phys. 41(16), 165104 (2008).
14. J. H. Lim, C. K. Kang, K. K. Kim, I. K. Park, D. K. Hwang, and S. J. Park, "UV electroluminescence emission from ZnO light-emitting diodes grown by high temperature radiofrequency sputtering," Adv. Mater. 18(20), 2720-2724 (2006).
15. M. Hansen, J. Piprek, P. M. Pattison, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Higher efficiency InGaN laser diodes with an improved quantum well capping configuration," Appl. Phys. Lett. 81(22), 4275-4277 (2002).
16. S. Grzanka, G. Franssen, G. Targowski, K. Krowicki, T. Suski, R. Czernecki, P. Perlin, and M. Leszczyński, "Role of the electron blocking layer in the low-temperature collapse of electroluminescence in nitride light-emitting diodes," Appl. Phys. Lett. 90(10), 103507 (2007).
17. Y. S. Choi, D. K. Hwang, B. J. Kwon, J. W. Kang, Y. H. Cho, and S. J. Park, "Effect of VI/II gas ratio on the epitaxial growth of ZnO films by metalorganic chemical vapor deposition," Jpn. J. Appl. Phys. 50(10), 105502 (2011).
18. A. A. Iliadis, R. D. Vispute, T. Venkatesan, and K. A. Jones, "Ohmic metallization technology for wide bandgap semiconductors," Thin Solid Films 420-421(1), 478-486 (2002). (Pubitemid 35459765)
19. See http://www.semitech.us/products/SiLENSe/for details on the software package.
20. J. W. Mares, M. Falanga, A. V. Thompson, A. Osinsky, J. Q. Xie, B. Hertog, A. Dabiran, P. P. Chow, S. Karpov, and W. V. Schoenfeld, "Hybrid CdZnO/GaN quantum-well light emitting diodes," J. Appl. Phys. 104(9), 093107 (2008).
21. S. Heikman, S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures," J. Appl. Phys. 93(12), 10114-10118 (2003).
22. E. F. Schubert, "Electron-blocking layers" in Light-Emitting Diodes, 2nd ed. (Cambridge University, Cambridge, 2006), pp. 81-82.