SCOPUS 정보 검색 플랫폼

Microsystem Technologies

Volumn 19, Issue 3, 2013, Pages 433-438

Vertical Si nanowire with ultra-high-aspect-ratio by combined top-down processing technique

(3) Nakamura, Jun a Higuchi, Kohei b Maenaka, Kazusuke b,c

a YAMAHA CORPORATION (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c UNIVERSITY OF HYOGO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; MICROMETERS; NANOWIRES; SILICON; SUBSTRATES;

BOSCH PROCESS; DEEP REACTIVE ION ETCHING; MICROMETER SCALE; NANO-METER SCALE; PROCESSING TECHNIQUE; SACRIFICIAL OXIDATION; SI SUBSTRATES; TOP DOWN APPROACHES;

ASPECT RATIO;

EID: 84878558358 PISSN: 09467076 EISSN: None Source Type: Journal
DOI: 10.1007/s00542-012-1662-2 Document Type: Conference Paper

Times cited : (23)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.