Demonstration of Silicon-on-insulator mid-infrared spectrometers operating at 3.8μm

Optics Express

Volumn 21, Issue 10, 2013, Pages 11659-11669

  Muneeb, M ^a,b   Chen, X ^c   Verheyen, P ^d   Lepage, G ^d   Pathak, S ^a   Ryckeboer, E ^a   Malik, A ^a   Kuyken, B ^a   Nedeljkovic, M ^c   Van Campenhout, J ^d   Mashanovich, G Z ^c   Roelkens, G ^a  

^a GHENT UNIVERSITY   (Belgium)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^d IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYED WAVEGUIDE GRATINGS; DIFFRACTION GRATINGS; INFRARED DEVICES; INFRARED SPECTROMETERS;

ARRAYED WAVEGUIDES; CONCAVE GRATING; LOW INSERTION LOSS; MIDINFRARED; PILOT LINE; SILICON ON INSULATOR; SOI WAFERS; WAVEGUIDE PROPAGATION;

SPECTROMETERS;

SILICON;

CHEMISTRY; DEVICE FAILURE ANALYSIS; DEVICES; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; INFRARED SPECTROPHOTOMETRY; REFRACTOMETRY; SURFACE PLASMON RESONANCE; ARTICLE; EQUIPMENT; EQUIPMENT FAILURE;

ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; REFRACTOMETRY; SILICON; SPECTROPHOTOMETRY, INFRARED; SURFACE PLASMON RESONANCE;

EID: 84878539771     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.011659     Document Type: Article

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