Tunnel-junction-limited multijunction solar cell performance over concentration

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 19, Issue 5, 2013, Pages

  Walker, Alex W ^a   Thériault, Olivier ^a   Wilkins, Matthew M ^a   Wheeldon, Jeffrey F ^a   Hinzer, Karin ^a  

^a UNIVERSITY OF OTTAWA   (Canada)

Author keywords

concentrated photovoltaics; modeling and simulation; multijunction solar cells; Tunnel junctions

Indexed keywords

CALIBRATED MODEL; DOPING LEVELS; LATTICE-MATCHED; MODELING AND SIMULATION; MULTI JUNCTION SOLAR CELLS; P-DOPED LAYERS; PHOTOVOLTAICS; TRAP ASSISTED TUNNELING MODEL;

ALUMINUM GALLIUM ARSENIDE; SOLAR CELLS; TUNNEL JUNCTIONS;

COMPUTER SIMULATION;

EID: 84878516653     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2013.2258140     Document Type: Article

References (26)

1. K. Zahraman, S. J. Taylor, B. Beaumont, J. C. Grenet, P. Gibart, and C. Verie, "Efficient GaAs tunnel diode as an inter-cell ohmic contact in the tandem Alx Ga1x As/GaAs," in Proc. 23rd IEEE Photovoltaics Spec. Conf., Louisville, KY, USA, May 10-14, 1993, pp. 708-711.
2. F. Dimroth, R. Beckert, M. Meusel, U. Schubert, and A. W. Bett, "Metamorphic Gay In1y P/Ga1x Inx As tandem solar cells for space and for terrestial concentrator applications at C>1000 suns," Prog. Photovoltaics: Res. Appl., vol. 9, pp. 165-178, 2001. (Pubitemid 32498606)
3. V. M. Andreev, E. A. Ionova, V. R. Larionov, V. D. Rumyantsev, M. Z. Shvarts, and G. Glenn, "Tunnel diode revealing peculiarities at I-V measurements in multijunction III-V solar cells," in Proc. 4th World Conf. Photovoltaic Energy Convers., May 2006, vol. 1, pp. 799-802.
4. J. M. Gordon, E. A Katz, W. Tassew, and D. Feuermann, "Photovoltaic hysteresis and its ramifications for concentrator solar cell design and diagnostics," Appl. Phys. Lett., vol. 86, pp. 073508-1-073508-3, 2005.
5. M.Yang, T. Takamoto, E. Ikeda,H.Kurita, andM.Yamaguchi, "Investigation of high-efficiency InGaP/GaAs tandem solar cells under concentration operation," Jpn. J. Appl. Phys., vol. 37, pp. 836-838, 1998.
6. G. Kolhatkar, J. F. Wheeldon, C. E. Valdivia, A. W. Walker, S. Fafard, A. Turala, A. Jaouad, R. Ares, V. Aimez, and K. Hinzer, "Current-voltage measurements within the negative differential resistance region of Al- GaAs/AlGaAs tunnel junctions for high concentration photovoltaic," Int. J. Nanosci., vol. 11, pp. 1240014-1-1240014-6, 2012.
7. J. F. Wheeldon, C. E. Valdivia, A. W. Walker, G. Kolhatkar, A. Jaouad, A. Turala, B. Riel, D. Masson, N. Puetz, S. Fafard, R. Ares, V. Aimez, T. J. Hall, and K. Hinzer, "Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multi-junction solar cells," Prog. Photovoltaics: Res. Appl., vol. 19, pp. 442-452, 2011.
8. I. Garcia, I. Rey-Stolle, and C. Algora, "Performance analysis of Al- GaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics," J. Phys. D: Appl. Phys., vol. 45, pp. 1-8, 2012.
9. M. Hermle, G. Letay, S. P. Philipps, and A. W. Bett, "Numerical simulation of tunnel diodes for multi-junction solar cells," Prog. Photovoltaics: Res. Appl., vol. 16, pp. 409-418, 2008.
10. K. Jandieri, S. D. Baranovskii, O. Rubel, W. Stolz, F. Gebhard, W. Guter, M. Hermle, and A. W. Bett, "Resonant electron tunneling through defects in GaAs tunnel diodes," J. Appl. Phys., vol. 104, pp. 094506-1-094506-7, 2008.
11. K. Jandieri, S. D. Baranovskii,W. Stolz, F. Gebhard,W.Guter,M.Hermle, and A. W. Bett, "Fluctuations of the peak current of tunnel diodes inmultijunction solar cells," J. Phys. D: Appl. Phys., vol. 42, pp. 1-8, 2009.
12. M. Baudrit and C. Algora, "Tunnel diode modeling, including nonlocal trap-assisted tunneling: A focus on III-V multijunction solar cell simulation," IEEE Trans. Electron Devices, vol. 57, no. 10, pp. 2564-2571, Oct. 2010.
13. B. Paquette, M. DeVita, G. Kolhatkar, A. Turala, A. Boucherif, J. F. Wheeldon, A. W. Walker, O. Th'eriault, K. Hinzer, C. E. Valdivia, S. G. Wallace, S. Fafard, V. Aimez, and R. Ares, "Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminum for multijunction solar cells," presented at the Int. Conf. Concentrating Photovoltaic Syst., Miyazaki, Japan, Apr. 2013.
14. E. O. Kane, "Theory of tunneling," J. Appl. Phys., vol. 32, pp. 83-91, 1961.
15. Sentaurus Device User Guide, Version G-2012.06, Synopsys Inc., Mountain View, CA, USA, 2012, pp. 610-623.
16. A. Schenk, "A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon," Solid-State Electron., vol. 35, pp. 1585-1596, 1992. (Pubitemid 23579779)
17. G. A. M. Hurkx, D. B. M. Klaassen, andM. P. G.Knuvers, "A newrecombination model for device simulation including tunneling," IEEE Trans. Electron Devices, vol. 39, no. 2, pp. 331-338, Feb. 1992.
18. Sentaurus Device User Guide, Version G-2012.06, Synopsys Inc., Mountain View, CA, USA, 2012, pp. 367-371.
19. K. Huang and A. Rhys, "Theory of light absorption and non-radiative transitions in F-centres," Proc. R. Soc. Lond., Ser. A, vol. 204, pp. 406- 423, 1950.
20. U. Woggon, E. Lüthgens, H. Wenisch, and D. Hummel, "Probing the electron-LO-phonon interaction of a single impurity state in a semiconductor," Phys. Rev. B, vol. 63, pp. 073205-1-073205-4, 2001.
21. L.Wang, J. M. L. Figueiredo, C. N. Ironside, and E.Wasige, "DC characterization of tunnel diodes under stable non-oscillatory circuit conditions," IEEE Trans. Electron Devices, vol. 58, no. 2, pp. 342-347, Feb. 2011.
22. A. W. Walker, J. F. Wheeldon, O. Th'eriault, M. Yandt, and K. Hinzer, "Temperature dependent external quantum efficiency simulations and experimental measurement of lattice matched quantum dot enhanced multijunction solar cells," in Proc. 37th IEEE Photovoltaic Spec. Conf., Seattle, WA, USA, Jun. 2011, pp. 000564-00569.
23. J. F. Wheeldon, C. E. Valdivia, S. Chow, O. Th'eriault, A. Walker, M. Yandt, D. Masson, B. Riel, D. McMeekin, N. Puetz, S. G. Wallace, V. Aimez, R. Ares, T. J. Hall, S. Fafard, and K. Hinzer, "Efficiency measurements and simulations of GaInP/InGaAs/Ge quantum dot enhanced solar cells at up to 1000-suns under flash and continuous concentration," in Proc. 7th Int. Conf. Concentrating Photovoltaics Syst., Las Vegas, NV, USA, Apr. 2011, pp. 220-223.
24. M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, "Solar cell efficiency tables (version 38)," Prog. Photovoltaics: Res. Appl., vol. 19, pp. 565-572, 2011.
25. W. Guter and A. W. Bett, "I-V characterization of tunnel diodes and multijunction solar cells," IEEE Trans. Electron Devices, vol. 53, no. 9, pp. 2216-2222, Sep. 2006. (Pubitemid 46405147)
26. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices. NewYork, NY, USA: Wiley, 2007, pp. 417-431.