Tunnel diode modeling, including nonlocal trap-assisted tunneling: A focus on IIIV multijunction solar cell simulation

IEEE Transactions on Electron Devices

Volumn 57, Issue 10, 2010, Pages 2564-2571

  Baudrit, Mathieu ^a   Algora, Carlos ^b  

^a French National Institute for Solar Energy (CEA INES)   (France)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

IIIV semiconductors; simulation; solar cell; tunnel diode

Indexed keywords

DIODE MODELING; DOPING PROFILES; HIGH EFFICIENCY; II-IV SEMICONDUCTORS; METALIZATIONS; MULTI JUNCTION SOLAR CELLS; NONLOCAL; SERIES RESISTANCES; SILVACO; SIMULATION; SOLAR-CELL APPLICATIONS; STATE-OF-THE-ART APPROACH; TRAP ASSISTED TUNNELING; VOLTAGE DROP;

DIODES; ENERGY CONVERSION; SEMICONDUCTOR DOPING; SOLAR CELLS; SOLAR ENERGY; TUNNEL DIODES; TUNNEL JUNCTIONS;

SEMICONDUCTOR DIODES;

EID: 77956989920     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2061771     Document Type: Article

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