Using process monitor wafers to understand directed self-assembly defects

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8680, Issue , 2013, Pages

  Cao, Yi ^a   Her, Young Jun ^a   Delgadillo, Paulina Rincon ^b   Vandenbroeck, Nadia ^c   Gronheid, Roel ^c   Chan, Boon Teik ^c   Hashimoto, Yukio ^d   Romo, Ainhoa ^e   Somervell, Mark ^e   Nafus, Kathleen ^e   Nealey, Paul F ^b  

^a AZ Electronic Materials   (United States)

^b UNIVERSITY OF CHICAGO   (United States)

^c IMEC   (Belgium)

^d Mita Kokusai Bldg   (Japan)

^e TOKYO ELECTRON AMERICA INC   (United States)

Author keywords

Chemo epitaxy; Defectivity; Directed self assembly

Indexed keywords

CHEMO-EPITAXY; CRITICAL QUESTIONS; DEFECTIVITY; DIRECTED SELF-ASSEMBLY; HIGH VOLUME MANUFACTURING; ITS APPLICATIONS; LITHOGRAPHIC DEFECTS; LITHOGRAPHIC TECHNOLOGIES;

DEFECTS; EPITAXIAL GROWTH; PROCESS CONTROL; SELF ASSEMBLY;

TECHNOLOGY;

EID: 84878386680     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.2011658     Document Type: Conference Paper

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