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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 31, Issue 3, 2013, Pages

Epitaxial growth of engineered metals for mid-infrared plasmonics

(3) Law, Stephanie a Yu, Lan a Wasserman, Daniel a

a University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL FILMS; EPITAXIAL GROWTH; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; PLASMONS;

DOPING DENSITIES; HALL EFFECT MEASUREMENT; HIGH GROWTH RATE; HIGH QUALITY; INFRARED REFLECTIONS; MID-INFRARED SPECTRAL RANGE; MIDINFRARED; SUBSTRATE TYPES;

SEMICONDUCTOR DOPING;

EID: 84878357593 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.4797487 Document Type: Article

Times cited : (57)

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