Formation of stoichiometric, sub-stoichiometric undoped and hydrogen doped tungsten oxide films, enabled by pulsed introduction of O2 or H 2 during hot-wire vapor deposition

Thin Solid Films

Volumn 537, Issue , 2013, Pages 124-130

  Kostis, I ^a,b,c   Vourdas, N ^a   Vasilopoulou, M ^a   Douvas, A ^a   Papadimitropoulos, G ^a   Konofaos, N ^c   Iliadis, A ^c   Davazoglou, D ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b Technological and Educational Institute of Pireaus   (Greece)

^c UNIVERSITY OF THE AEGEAN   (Greece)

Author keywords

Doped oxide; Hot wire chemical vapor deposition; Optical properties; Pulsed injection; Tungsten oxide

Indexed keywords

DEPOSITION CONDITIONS; DOPED OXIDES; HOT WIRE CHEMICAL VAPOR DEPOSITION; OXYGEN DEFICIENT; PULSED INJECTION; STOICHIOMETRIC FILMS; TUNGSTEN OXIDE; TUNGSTEN OXIDE FILMS;

CHEMICAL VAPOR DEPOSITION; DEPOSITS; ELECTRONIC STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; OPTICAL PROPERTIES; OXIDE FILMS; OXIDES; SPECTROSCOPIC ELLIPSOMETRY; STOICHIOMETRY; TUNGSTEN COMPOUNDS; VAPORS; WIRE;

SEMICONDUCTING FILMS;

EID: 84878326370     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.04.021     Document Type: Article

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