Substoichiometric hot-wire WO x films deposited in reducing environment

Thin Solid Films

Volumn 520, Issue 9, 2012, Pages 3614-3619

  Vourdas, N ^a   Papadimitropoulos, G ^a   Kostis, I ^b   Vasilopoulou, M ^a   Davazoglou, D ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b Technological and Educational Institute of Pireaus   (Greece)

Author keywords

Hot wire deposition; Thin films; Tungsten oxide

Indexed keywords

COLD SUBSTRATES; DEPOSITION METHODS; METALLIC FILAMENTS; NEAR ROOM TEMPERATURE; OPTICAL GAP; REDUCING ENVIRONMENT; SI SUBSTRATES; THERMAL-ANNEALING; TOTAL PRESSURE; TRANSMISSION ELECTRON MICROSCOPE; TUNGSTEN FILAMENTS; TUNGSTEN OXIDE; TUNGSTEN OXIDE FILMS; UNSATURATED BONDS;

DEPOSITION; ELECTRON BEAMS; OXIDES; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; TUNGSTEN COMPOUNDS; VAPORS; WIRE;

OXIDE FILMS;

EID: 84857362893     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.12.070     Document Type: Article

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