SCOPUS 정보 검색 플랫폼

Volumn 535, Issue 1, 2013, Pages 206-213

Characteristics of MoSe2 formation during rapid thermal processing of Mo-coated glass

(8) Lee, Soobin a Koo, Jaseok a Kim, Sammi a Kim, Soo Hyun a Cheon, Taehoon b Oh, Jong Seok c Kim, Suk Jin c Kim, Woo Kyoung a

a Yeungnam University (South Korea)

b Daegu Gyeongbuk Institute of Science and Technology (South Korea)

c R and D Center (South Korea)

Author keywords

Cu(InGa)Se2; High temperature X ray diffraction; MoSe2; Rapid thermal processing

Indexed keywords

ENERGY DISPERSIVE X RAY SPECTROSCOPY; HIGH TEMPERATURE X-RAY DIFFRACTION; MOSE2; RANDOM ORIENTATIONS; REACTION PATHWAYS; SELECTED AREA ELECTRON DIFFRACTION PATTERN; SPUTTERING SYSTEMS; THERMAL-ANNEALING;

ELECTRON DIFFRACTION; GLASS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; SUPERCONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

VAPORS;

EID: 84878188250 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.10.035 Document Type: Conference Paper

Times cited : (15)

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