Effect of precursor structure on Cu(InGa)Se2 formation by reactive annealing

Thin Solid Films

Volumn 519, Issue 21, 2011, Pages 7245-7249

  Park, Hyeonwook ^a   Kim, Sung Cheol ^a   Lee, Sang Hwan ^a   Koo, Jaseok ^a   Lee, Sung Ho ^b   Jeon, Chan Wook ^a   Yoon, Seokhyun ^c   Kim, Woo Kyoung ^a  

^a Yeungnam University   (South Korea)

^b Nano Practical Application Center   (South Korea)

^c LG Chemical Ltd   (South Korea)

Author keywords

Cu(InGa)Se2; MoSe2; Rapid thermal process; Selenization

Indexed keywords

CDS; CHEMICAL BATH DEPOSITION PROCESS; HIGH TEMPERATURE X-RAY DIFFRACTION; IN-SITU; MOSE2; PHASE EVOLUTIONS; RAPID THERMAL PROCESS; REACTIVE ANNEALING; SCANNING ELECTRON MICROSCOPE; SELENIZATION;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; COPPER COMPOUNDS; DIFFRACTION; GALLIUM; INTERMETALLICS; MOLYBDENUM; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; SODIUM; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SELENIUM COMPOUNDS;

EID: 80052151189     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.220     Document Type: Conference Paper

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