Cu(InGa)Se2 thin film photovoltaic absorber formation by rapid thermal annealing of binary stacked precursors

Thin Solid Films

Volumn 520, Issue 5, 2011, Pages 1484-1488

  Koo, Jaseok ^a   Kim, Sung Cheol ^a   Park, Hyeonwook ^a   Kim, Woo Kyoung ^a  

^a Yeungnam University   (South Korea)

Author keywords

CIGS; Cu(InGa)Se2; High temperature XRD; Rapid thermal processing

Indexed keywords

BI-LAYER; CIGS; HIGH TEMPERATURE X-RAY DIFFRACTION; HIGH-TEMPERATURE XRD; IN-DEPTH PROFILE; IN-SITU; OVERPRESSURE; PERITECTIC POINTS; PHASE EVOLUTIONS; PHOTOVOLTAIC ABSORBERS; STACKED PRECURSORS;

GALLIUM; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SYNTHESIS (CHEMICAL); X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 82755161849     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.08.052     Document Type: Conference Paper

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