Spatial recognition of defects and tube type in carbon nanotube field effect transistors using electrostatic force microscopy

Nanotechnology

Volumn 24, Issue 23, 2013, Pages

  Ibrahim, Imad ^a,b   Rümmeli, Mark H ^a,b   Ranjan, Nitesh ^c   Büchner, Bernd ^a   Cuniberti, Gianaurelio ^b  

^a IFW DRESDEN   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c ABB CORPORATE RESEARCH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNED NANOTUBES; CROSSOVER POINTS; ELECTROSTATIC FORCE MICROSCOPY; HIGH CURRENTS; HIGH QUALITY; LOW QUALITIES; NANOTUBE ELECTRONICS; TUBE-TYPE;

ATOMIC FORCE MICROSCOPY; CARBON NANOTUBE FIELD EFFECT TRANSISTORS; DEFECTS; ELECTRIC FORCE MICROSCOPY; ELECTROPHORESIS; ELECTROSTATIC FORCE;

TUBES (COMPONENTS);

EID: 84878071320     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/23/235708     Document Type: Article

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