Layered semiconductor tungsten disulfide: Photoactive material in bulk heterojunction solar cells

Nano Energy

Volumn 2, Issue 3, 2013, Pages 419-424

  Shanmugam, Mariyappan ^a   Durcan, Chris A ^a   Jacobs Gedrim, Robin ^a   Yu, Bin ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Bulk heterojunction; Interfacial recombination; Layered semiconductor; Titanium dioxide; Tungsten disulfide

Indexed keywords

BULK HETEROJUNCTION; BULK HETEROJUNCTION (BHJ); BULK HETEROJUNCTION SOLAR CELLS; INTERFACIAL RECOMBINATION; LAYERED SEMICONDUCTORS; SHOCKLEY-READ-HALL MODELS; SPECTROSCOPIC MEASUREMENTS; TUNGSTEN DISULFIDE;

HETEROJUNCTIONS; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; OXIDES; SOLAR CELLS; SULFUR COMPOUNDS; TUNGSTEN;

TITANIUM DIOXIDE;

EID: 84877832569     PISSN: 22112855     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nanoen.2012.11.011     Document Type: Article

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