Electrostatic gating of metallic and insulating phases in SmNiO3 ultrathin films

Applied Physics Letters

Volumn 102, Issue 18, 2013, Pages

  Ha, Sieu D ^a   Vetter, Ulrich ^b   Shi, Jian ^a   Ramanathan, Shriram ^a  

^a HARVARD UNIVERSITY   (United States)

^b UNIVERSITY OF GÖTTINGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATED ELECTRON SYSTEMS; ELECTRIC DOUBLE LAYER; ELECTROCHEMICAL DOPING; ELECTROSTATIC CHARGES; METAL-INSULATOR PHASE TRANSITION; RESISTANCE BEHAVIORS; RESISTANCE MODULATION; RESISTANCE REDUCTION;

ELECTROSTATICS; IONIC LIQUIDS; METAL INSULATOR BOUNDARIES; MODULATION; ULTRATHIN FILMS;

SEMICONDUCTOR DOPING;

EID: 84877784322     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804142     Document Type: Article

References (23)

1. G. Catalan, Phase Transitions 81, 729 (2008). 10.1080/01411590801992463
2. R. Scherwitzl, P. Zubko, I. G. Lezama, S. Ono, A. F. Morpurgo, G. Catalan, and J.-M. Triscone, Adv. Mater. 22, 5517 (2010). 10.1002/adma.201003241
3. S. D. Ha, R. Jaramillo, D. M. Silevitch, F. Schoofs, K. Kerman, J. D. Baniecki, and S. Ramanathan, Phys. Rev. B 87, 125150 (2013). 10.1103/PhysRevB.87.125150
4. A. B. McEwen, H. L. Ngo, K. LeCompte, and J. L. Goldman, J. Electrochem. Soc. 146, 1687 (1999). 10.1149/1.1391827
5. M. M. Islam, M. T. Alam, and T. Ohsaka, J. Phys. Chem. C 112, 16568 (2008). 10.1021/jp8058849
6. H. Ji, J. Wei, and D. Natelson, Nano Lett. 12, 2988 (2012). 10.1021/nl300741h
7. D. S. Silvester and R. G. Compton, Z. Phys. Chem. 220, 1247 (2006). 10.1524/zpch.2006.220.10.1247
8. H. Yuan, H. Shimotani, J. Ye, S. Yoon, H. Aliah, A. Tsukazaki, M. Kawasaki, and Y. Iwasa, J. Am. Chem. Soc. 132, 18402 (2010). 10.1021/ja108912x
9. J. Jeong, N. Aetukuri, T. Graf, T. D. Schladt, M. G. Samant, and S. S. P. Parkin, Science 339, 1402 (2013). 10.1126/science.1230512
10. See supplementary material at http://dx.doi.org/10.1063/1.4804142 E-APPLAB-102-031319 for experimental details, gating reproducibility, and gate leakage current testing.
11. S. D. Ha, M. Otaki, R. Jaramillo, A. Podpirka, and S. Ramanathan, J. Solid State Chem. 190, 233 (2012). 10.1016/j.jssc.2012.02.047
12. S. Asanuma, P. H. Xiang, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, K. Ueno, H. Shimotani, H. Yuan, M. Kawasaki, and Y. Iwasa, Appl. Phys. Lett. 97, 142110 (2010). 10.1063/1.3496458
13. Y. Zhou and S. Ramanathan, J. Appl. Phys. 111, 084508 (2012). 10.1063/1.4704689
14. G. Catalan, R. M. Bowman, and J. M. Gregg, Phys. Rev. B 62, 7892 (2000). 10.1103/PhysRevB.62.7892
15. J. Pérez-Cacho, J. Blasco, J. García, and J. Stankiewicz, Phys. Rev. B 59, 14424 (1999). 10.1103/PhysRevB.59.14424
16. H. Hofsass, P. Ehrhardt, H. G. Gehrke, M. Brotzmann, U. Vetter, K. Zhang, J. Krauser, C. Trautmann, C. Ko, and S. Ramanathan, AIP Adv. 1, 032168 (2011). 10.1063/1.3646527
17. J. A. Widegren, E. M. Saurer, K. N. Marsh, and J. W. Magee, J. Chem. Thermodyn. 37, 569 (2005). 10.1016/j.jct.2005.04.009
18. A. M. OMahony, D. S. Silvester, L. Aldous, C. Hardacre, and R. G. Compton, J. Chem. Eng. Data 53, 2884 (2008). 10.1021/je800678e
19. S. Mickevičius, S. Grebinskij, V. Bondarenka, H. Tvardauskas, M. Senulis, V. Lisauskas, K. ŠliuŽiene, B. Vengalis, and B. A. Orlowski, Radiat. Phys. Chem. 78, S29 (2009). 10.1016/j.radphyschem.2009.05.016
20. J. Son, S. Rajan, S. Stemmer, and S. J. Allen, J. Appl. Phys. 110, 084503 (2011). 10.1063/1.3651612
21. T. Katsufuji, Y. Okimoto, T. Arima, Y. Tokura, and J. B. Torrance, Phys. Rev. B 51, 4830 (1995). 10.1103/PhysRevB.51.4830
22. X. Granados, J. Fontcuberta, X. Obradors, L. Mañosa, and J. B. Torrance, Phys. Rev. B 48, 11666 (1993). 10.1103/PhysRevB.48.11666
23. H. Yuan, H. Shimotani, A. Tsukazaki, A. Ohtomo, M. Kawasaki, and Y. Iwasa, Adv. Funct. Mater. 19, 1046 (2009). 10.1002/adfm.200801633