Effect of annealing on electrical and structural properties of LaNiO3-δ thin films

Radiation Physics and Chemistry

Volumn 78, Issue 10 SUPPL., 2009, Pages

  Mickevicius S ^a   Grebinskij, S ^a   Bondarenka, V ^a   Tvardauskas, H ^a   Senulis, M ^a   Lisauskas, V ^a   Sliuziene K ^a   Vengalis, B ^a   Orlowski, B A ^b  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

LaNiO3 thin film; Oxide materials; Rare earth alloys and compounds; Surfaces and interfaces; XPS

Indexed keywords

LANIO3 THIN FILM; OXIDE MATERIALS; RARE-EARTH ALLOYS AND COMPOUNDS; SURFACES AND INTERFACES; XPS;

ADSORPTION; ANNEALING; ELECTRIC PROPERTIES; OXYGEN; RARE EARTH ALLOYS; RARE EARTH COMPOUNDS; RARE EARTH ELEMENTS; SURFACES; THIN FILM DEVICES; THIN FILMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

ANION; LANTHANUM NICKELATE; METAL COMPLEX; METAL OXIDE; OXYGEN; UNCLASSIFIED DRUG;

ADSORPTION KINETICS; AMBIENT AIR; ARTICLE; CHEMICAL ANALYSIS; CHEMICAL COMPOSITION; CONTROLLED STUDY; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRON RADIATION; HIGH TEMPERATURE; MICROWAVE OVEN; SEMICONDUCTOR; SURFACE PROPERTY; VACUUM; X RAY FILM; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 69049093737     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.radphyschem.2009.05.016     Document Type: Article

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