SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 21, 2013, Pages 6327-6334

Performance optimization of low-temperature-annealed solution-processable ZnO buffer layers for inverted polymer solar cells

(4) Park, Hye Yun a Lim, Dongchan b Kim, Kwang Dae b Jang, Sung Yeon c

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b Korea Institute of Material Science (South Korea)

c Kookmin University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BUTYRIC ACID; ESTERIFICATION; ESTERS; FIELD EFFECT TRANSISTORS; METALLIC FILMS; OPTIMIZATION; SECONDARY BATTERIES; SOL-GEL PROCESS; SOLAR CELLS; TEMPERATURE; ZINC OXIDE;

ELECTRON-TRANSPORTING LAYERS; FIELD EFFECT TRANSISTOR (FETS); FILM SURFACE MORPHOLOGY; INVERTED POLYMER SOLAR CELLS; LOW TEMPERATURE ANNEALING; PERFORMANCE OPTIMIZATIONS; POWER CONVERSION EFFICIENCIES; [6 ,6]-PHENYL-C61-BUTYRIC ACID METHYL ESTERS;

ANNEALING;

EID: 84877650306 PISSN: 20507488 EISSN: 20507496 Source Type: Journal
DOI: 10.1039/c3ta10637c Document Type: Article

Times cited : (96)

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