Ternary CuInS2 photoelectrodes created using the sulfurization of Cu-In metal precursors for photoelectrochemical applications

Materials Research Bulletin

Volumn 48, Issue 7, 2013, Pages 2457-2468

  Cheng, Kong Wei ^a   Wu, Yen Ching ^a   Hu, Yu Tung ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

A. Semiconductors; A. Thin films; B. Plasma deposition; D. Catalytic properties

Indexed keywords

AG/AGCL ELECTRODES; CATALYTIC PROPERTIES; COPPER INDIUM DISULFIDE; ENERGY DISPERSIVE ANALYSIS OF X-RAYS; PHOTOELECTROCHEMICAL APPLICATIONS; SEMICONDUCTOR LAYERS; SURFACE PROFILE MEASUREMENTS; TRANSMITTANCE AND REFLECTANCES;

GLASS; NANOCOMPOSITES; SEMICONDUCTING INDIUM; SUBSTRATES; TIN OXIDES; X RAY DIFFRACTION;

INDIUM;

EID: 84877578316     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2013.02.085     Document Type: Article

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