Epitaxial growth of chalcopyrite CulnS2 films on GaP(001) by controlling [Cu]/ [In] ratio

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 5, 2009, Pages 1019-1022

  Vequizo, Reynaldo Magdadaro ^a,b   Tsuboi, Nozomu ^a   Kobayashi, Satoshi ^a   Oishi, Koichiro ^c   Kaneko, Futao ^a  

^a NIIGATA UNIVERSITY   (Japan)

^b MINDANAO STATE UNIVERSITY ILIGAN INSTITUTE OF TECHNOLOGY   (Philippines)

^c NAGAOKA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BROAD EMISSION BANDS; CHALCOPYRITE STRUCTURES; CU-RICH FILMS; ORIENTED STRUCTURE; STOICHIOMETRIC FILMS; STRUCTURAL QUALITIES;

COPPER COMPOUNDS; DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM ALLOYS; GOLD; HIGH ENERGY ELECTRON DIFFRACTION; HOLOGRAPHIC INTERFEROMETRY; METALLORGANIC VAPOR PHASE EPITAXY;

COPPER;

EID: 70349426129     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200881163     Document Type: Conference Paper

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